- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,142
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Infineon Technologies | MOSFET N-CH 650V 11A TO-263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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843
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Infineon Technologies | MOSFET N-CH 650V 11A TO252-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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1,792
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 800V 3.9A TO252-3 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | 800V | 3.9A (Tc) | 1.4 Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | 570pF @ 100V | 10V | ±20V | |||
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1,528
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Infineon Technologies | MOSFET N-CH 600V 7.3A TO252 | CoolMOS™ P6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | 600V | 7.3A (Tc) | 600 mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | 557pF @ 100V | 10V | ±20V | |||
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1,024
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Infineon Technologies | MOSFET N-CH 800V 4A 3TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | 800V | 4A (Tc) | 1.3 Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | 570pF @ 100V | 10V | ±20V | |||
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3,277
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ON Semiconductor | MOSFET N-CH 150V 26A DPAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 63W (Tc) | N-Channel | 150V | 26A (Tc) | 40 mOhm @ 26A, 10V | 4V @ 250µA | 18.6nC @ 10V | 1285pF @ 75V | 10V | ±20V | |||
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1,976
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 7A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 63W (Tc) | N-Channel | 600V | 7A (Tc) | 600 mOhm @ 2.1A, 10V | 4V @ 250µA | 13nC @ 10V | 516pF @ 100V | 10V | ±30V |
