Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STD10N60DM2
Per Unit
$1.62
RFQ
1,937
Ships today + free overnight shipping
STMicroelectronics N-CHANNEL 600 V, 0.26 OHM TYP., MDmesh™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 109W (Tc) N-Channel - 650V 8A (Tc) 530 mOhm @ 4A, 10V 5V @ 250µA 15nC @ 10V 529pF @ 100V 10V ±25V
STD13NM60ND
Per Unit
$3.85
RFQ
3,145
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 11A DPAK FDmesh™ II Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 109W (Tc) N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 5V @ 250µA 24.5nC @ 10V 845pF @ 50V 10V ±25V
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