- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
14 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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600
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STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | FDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 600V | 29A (Tc) | 110 mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4nC @ 10V | 2785pF @ 50V | 10V | ±25V | |||
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1,587
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STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | FDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 600V | 29A (Tc) | 110 mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4nC @ 10V | 2785pF @ 50V | 10V | ±25V | |||
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2,639
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STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | MDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 600V | 29A (Tc) | 105 mOhm @ 14.5A, 10V | 4V @ 250µA | 83.6nC @ 10V | 2722pF @ 100V | 10V | ±25V | |||
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3,514
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STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | MDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 250W (Tc) | N-Channel | - | 600V | 29A (Tc) | 105 mOhm @ 14.5A, 10V | 4V @ 250µA | 84nC @ 10V | 2722pF @ 100V | 10V | ±25V | |||
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3,549
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Vishay Siliconix | MOSFET N-CH 600V 29A POWERPAK8 | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 202W (Tc) | N-Channel | - | 600V | 29A (Tc) | 100 mOhm @ 13.5A, 10V | 4V @ 250µA | 135nC @ 10V | 2609pF @ 100V | 10V | ±30V | |||
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3,868
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Infineon Technologies | MOSFET NCH 650V 83A PG-HDSOP-10 | CoolMOS™ G7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | 174W (Tc) | N-Channel | - | 600V | 29A (Tc) | 80 mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | 1640pF @ 400V | 10V | ±20V | |||
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2,133
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Infineon Technologies | MOSFET N-CH 650V 29A HSOF-8 | CoolMOS™ G7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8 | 167W (Tc) | N-Channel | - | 650V | 29A (Tc) | 80 mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | 1640pF @ 400V | 10V | ±20V | |||
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1,783
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Vishay Siliconix | MOSFET N-CH 600V 29A POWERPAK8 | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 202W (Tc) | N-Channel | - | 600V | 29A (Tc) | 98 mOhm @ 14A, 10V | 5V @ 250µA | 129nC @ 10V | 2614pF @ 100V | 10V | ±30V | |||
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2,613
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Vishay Siliconix | MOSFET N-CH 600V 29A TO220 | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | 37W (Tc) | N-Channel | - | 600V | 29A (Tc) | 125 mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | 2600pF @ 100V | 10V | ±30V | |||
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748
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Vishay Siliconix | MOSFET N-CH 600V 29A TO220AB | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | 250W (Tc) | N-Channel | - | 600V | 29A (Tc) | 125 mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | 2600pF @ 100V | 10V | ±30V | |||
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3,601
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Infineon Technologies | MOSFET N-CH 55V 29A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
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1,398
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Nexperia USA Inc. | MOSFET N-CH 60V 29A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 56W (Tc) | N-Channel | - | 60V | 29A (Tc) | 24.7 mOhm @ 15A, 10V | 4V @ 1mA | 13nC @ 10V | 686pF @ 30V | 10V | ±20V | |||
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2,851
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Nexperia USA Inc. | MOSFET N-CH 150V 29A DPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 150W (Tc) | N-Channel | - | 150V | 29A (Tc) | 63 mOhm @ 15A, 10V | 4V @ 1mA | 55nC @ 10V | 2390pF @ 25V | 10V | ±20V | |||
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1,985
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 500V 29A TO263 | aMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 357W (Tc) | N-Channel | - | 500V | 29A (Tc) | 150 mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6nC @ 10V | 1312pF @ 100V | 10V | ±30V |