Supplier Device Package :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
R6011KNJTL
Per Unit
$2.17
RFQ
1,263
Ships today + free overnight shipping
Rohm Semiconductor MOSFET N-CHANNEL 600V 11A TO263 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 124W (Tc) N-Channel Schottky Diode (Isolated) 600V 11A (Tc) 390 mOhm @ 3.8A, 10V 5V @ 1mA 22nC @ 10V 740pF @ 25V 10V ±20V
R6011ENJTL
Per Unit
$3.51
RFQ
3,143
Ships today + free overnight shipping
Rohm Semiconductor MOSFET N-CH 600V 11A LPT - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS (D2PAK) 40W (Tc) N-Channel - 600V 11A (Tc) 390 mOhm @ 3.8A, 10V 4V @ 1mA 32nC @ 10V 670pF @ 25V 10V ±20V
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