4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFH5406TRPBF
Per Unit
$1.57
RFQ
1,612
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 60V 40A 8-PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (5x6) 3.6W (Ta) N-Channel - 60V 11A (Ta), 40A (Tc) 14.4 mOhm @ 24A, 10V 4V @ 50µA 35nC @ 10V 1256pF @ 25V 10V ±20V
IRFR3806TRPBF
Per Unit
$1.24
RFQ
898
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 60V 43A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 71W (Tc) N-Channel - 60V 43A (Tc) 15.8 mOhm @ 25A, 10V 4V @ 50µA 30nC @ 10V 1150pF @ 50V 10V ±20V
IRFR48ZTRLPBF
Per Unit
$1.39
RFQ
2,921
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 55V 42A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 91W (Tc) N-Channel - 55V 42A (Tc) 11 mOhm @ 37A, 10V 4V @ 50µA 60nC @ 10V 1720pF @ 25V 10V ±20V
IRFS3806TRLPBF
Per Unit
$1.38
RFQ
1,791
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 60V 43A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 71W (Tc) N-Channel - 60V 43A (Tc) 15.8 mOhm @ 25A, 10V 4V @ 50µA 30nC @ 10V 1150pF @ 50V 10V ±20V
Page 1 / 1