- Manufacture :
- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
,%20SC-63.JPG)
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3,044
Ships today + free overnight shipping
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ON Semiconductor | MOSFET P-CH 250V 3.1A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 45W (Tc) | P-Channel | - | 250V | 3.1A (Tc) | 2.1 Ohm @ 1.55A, 10V | 5V @ 250µA | 14nC @ 10V | 420pF @ 25V | 10V | ±30V | |||
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2,821
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 150V 2.6A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2.8W (Ta) | N-Channel | - | 150V | 2.6A (Ta) | 185 mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | 10V | ±30V |
