Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPN80R3K3P7ATMA1
Per Unit
$0.74
RFQ
2,849
Ships today + free overnight shipping
Infineon Technologies COOLMOS P7 800V SOT-223 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-223-3 PG-SOT223 6.1W (Tc) N-Channel - 800V 1.9A (Tc) 3.3 Ohm @ 590mA, 10V 3.5V @ 30µA 5.8nC @ 10V 120pF @ 500V 10V ±20V
IPN70R2K0P7SATMA1
Per Unit
$0.57
RFQ
1,340
Ships today + free overnight shipping
Infineon Technologies COOLMOS P7 700V SOT-223 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount SOT-223-3 PG-SOT223 6W (Tc) N-Channel - 700V 3A (Tc) 2 Ohm @ 500mA, 10V 3.5V @ 30µA 3.8nC @ 10V 130pF @ 400V 10V ±16V
IPD80R3K3P7ATMA1
Per Unit
$0.84
RFQ
3,357
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 800V 1.9A TO252-3 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 18W (Tc) N-Channel - 800V 1.9A (Tc) 3.3 Ohm @ 590mA, 10V 3.5V @ 30µA 5.8nC @ 10V 120pF @ 500V 10V ±20V
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