- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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615
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 80V 12A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 80V | 12A (Ta), 68A (Tc) | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | 10V | ±20V | |||
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3,143
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 150V 6.2A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 150V | 6.2A (Ta), 35A (Tc) | 34.5 mOhm @ 7.6A, 10V | 4.9V @ 150µA | 55nC @ 10V | 2340pF @ 25V | 10V | ±20V | |||
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2,125
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 60V 86A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 60V | 86A (Tc) | 7 mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2120pF @ 25V | 10V | ±20V |
