- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,657
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 55V | 30A (Tc) | 24.5 mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | 10V | ±20V | |||
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1,263
Ships today + free overnight shipping
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 11A TO263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 124W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 11A (Tc) | 390 mOhm @ 3.8A, 10V | 5V @ 1mA | 22nC @ 10V | 740pF @ 25V | 10V | ±20V | |||
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913
Ships today + free overnight shipping
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Rohm Semiconductor | MOSFET N-CH 200V 12A LPT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (SC-83) | 1.56W (Ta), 40W (Tc) | N-Channel | - | 200V | 12A (Tc) | 325 mOhm @ 6A, 10V | 5.25V @ 1mA | 15nC @ 10V | 740pF @ 25V | 10V | ±30V |
