- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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850
Ships today + free overnight shipping
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ON Semiconductor | T6 40V DPAK EXPANSION AND | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 3.1W (Ta), 56W (Tc) | N-Channel | - | 40V | 19A (Ta), 82A (Tc) | 4.2 mOhm @ 40A, 10V | 4V @ 70µA | 32nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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3,078
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 100V 42A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 160W (Tc) | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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2,870
Ships today + free overnight shipping
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Rohm Semiconductor | MOSFET N-CH 200V 20A LPTS | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 1.56W (Ta), 40W (Tc) | N-Channel | - | 200V | 20A (Tc) | 130 mOhm @ 10A, 10V | 5V @ 1mA | 40nC @ 10V | 1900pF @ 25V | 10V | ±30V | |||
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746
Ships today + free overnight shipping
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Nexperia USA Inc. | MOSFET N-CH 40V 50A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 40V | 50A (Tc) | 11.2 mOhm @ 12A, 10V | 2.8V @ 1mA | 33.9nC @ 10V | 1900pF @ 25V | 10V | ±16V |
