- Manufacture :
- Mounting Type :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,845
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CH 450V 500MA TO92 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 | 2W (Tc) | N-Channel | - | 450V | 500mA (Tc) | 4.25 Ohm @ 250mA, 10V | 4.25V @ 250µA | 6.5nC @ 10V | 235pF @ 25V | 10V | ±30V | |||
,%20SC-63.JPG)
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2,904
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 600V 1.9A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 44W (Tc) | N-Channel | - | 600V | 1.9A (Tc) | 4.7 Ohm @ 950mA, 10V | 4V @ 250µA | 12nC @ 10V | 235pF @ 25V | 10V | ±30V | |||
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2,490
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 600V 1.9A | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 44W (Tc) | N-Channel | - | 600V | 1.9A (Tc) | 4.7 Ohm @ 950mA, 10V | 4V @ 250µA | 12nC @ 10V | 235pF @ 25V | 10V | ±30V |
