- Operating Temperature :
- FET Type :
- FET Feature :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,809
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STMicroelectronics | MOSFET N-CH 60V 4A SOT-223 | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 3.3W (Tc) | N-Channel | - | 60V | 4A (Tc) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 13nC @ 10V | 315pF @ 25V | 10V | ±20V | |||
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3,939
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 4A TO263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 58W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | 280pF @ 25V | 10V | ±20V | |||
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3,430
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STMicroelectronics | MOSFET N-CH 100V 4A POWERFLAT22 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerWDFN | PowerFlat™ (2x2) | 2.4W (Tc) | N-Channel | - | 100V | 4A (Tc) | 70 mOhm @ 2A, 10V | 4.5V @ 250µA | 7.8nC @ 10V | 408pF @ 25V | 10V | ±20V | |||
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3,620
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 500V 4A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 500V | 4A (Tc) | 2.7 Ohm @ 1.7A, 10V | 3V @ 250µA | 12nC @ 10V | 453pF @ 50V | 10V | ±20V | |||
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1,024
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Infineon Technologies | MOSFET N-CH 800V 4A 3TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | 570pF @ 100V | 10V | ±20V | |||
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1,041
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Vishay Siliconix | MOSFET P-CH 100V 4A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | 43W (Tc) | P-Channel | - | 100V | 4A (Tc) | 1.2 Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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3,045
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IXYS | MOSFET N-CH 1000V 4A TO-263 | HiPerFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 150W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 3 Ohm @ 2A, 10V | 4.5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | 10V | ±20V | |||
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3,896
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Rohm Semiconductor | MOSFET N-CH 600V 4A LPT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (D2PAK) | 40W (Tc) | N-Channel | - | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 4V @ 1mA | 15nC @ 10V | 250pF @ 25V | 10V | ±20V | |||
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2,381
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STMicroelectronics | MOSFET P-CH 60V 4A 8POWERFLAT | DeepGATE™, STripFET™ VI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 75W (Tc) | P-Channel | - | 60V | 4A (Tc) | 160 mOhm @ 1.5A, 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | 10V | ±20V | |||
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1,026
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 800V 4A DPAK | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 32W (Tc) | N-Channel | Super Junction | 800V | 4A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | 250pF @ 500V | 10V | ±20V | |||
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832
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Vishay Siliconix | MOSFET P-CH 100V 4A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 43W (Tc) | P-Channel | - | 100V | 4A (Tc) | 1.2 Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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2,069
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Infineon Technologies | MOSFET N-CHANNEL 800V 4A SOT223 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | PG-SOT223 | 7W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10nC @ 10V | 250pF @ 500V | 10V | ±20V |
