- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,242
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 600V 8THINPAK | CoolMOS™ P6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-ThinPak (5x6) | 89.3W (Tc) | N-Channel | - | 600V | 11.3A (Tc) | 360 mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22nC @ 10V | 1010pF @ 100V | 10V | ±20V | |||
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3,399
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Infineon Technologies | MOSFET N-CH 200V 11.3A 8TSDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 50W (Tc) | N-Channel | - | 200V | 11.3A (Tc) | 125 mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7nC @ 10V | 680pF @ 100V | 10V | ±20V | |||
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3,804
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 200V 11.3A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 50W (Tc) | N-Channel | - | 200V | 11.3A (Tc) | 125 mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7nC @ 10V | 680pF @ 100V | 10V | ±20V |