Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD038N06N3GATMA1
Per Unit
$1.64
RFQ
1,837
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 60V 90A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 188W (Tc) N-Channel - 60V 90A (Tc) 3.8 mOhm @ 90A, 10V 4V @ 90µA 98nC @ 10V 8000pF @ 30V 10V ±20V
DMTH6004SK3-13
Per Unit
$1.34
RFQ
1,637
Ships today + free overnight shipping
Diodes Incorporated MOSFET N-CHA 60V 100A DPAK Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 3.9W (Ta), 180W (Tc) N-Channel - 60V 100A (Tc) 3.8 mOhm @ 90A, 10V 4V @ 250µA 95.4nC @ 10V 4556pF @ 30V 10V ±20V
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