- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,040
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 200V 5.1A 8PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 200V | 5.1A (Ta) | 55 mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | 2290pF @ 100V | 10V | ±20V | |||
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2,212
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 250V 3.8A PQFN56 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN | 8-QFN | 3.6W (Ta), 8.3W (Tc) | N-Channel | - | 250V | 3.8A (Ta) | 100 mOhm @ 5.7A, 10V | 5V @ 150µA | 56nC @ 10V | 2150pF @ 50V | 10V | ±20V | |||
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3,045
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 150V 10A 8VQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 150V | 10A (Ta), 56A (Tc) | 31 mOhm @ 34A, 10V | 5V @ 150µA | 50nC @ 10V | 2300pF @ 50V | 10V | ±20V |
