- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,531
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 40V 100A | Automotive, AEC-Q101, PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | 227W (Tj) | N-Channel | 40V | 100A (Tc) | 2.4 mOhm @ 80A, 4.5V | 3V @ 250µA | 125nC @ 10V | 6700pF @ 25V | 10V | ±20V | |||
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1,141
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Nexperia USA Inc. | MOSFET N-CH 80V 100A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 306W (Tc) | N-Channel | 80V | 100A (Tc) | 4.5 mOhm @ 25A, 10V | 4V @ 1mA | 125nC @ 10V | 8400pF @ 40V | 10V | ±20V | |||
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1,362
Ships today + free overnight shipping
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Nexperia USA Inc. | MOSFET N-CH 100V 100A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 269W (Tc) | N-Channel | 100V | 100A (Tc) | 6.8 mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | 6686pF @ 50V | 10V | ±20V |