- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 2.5A, 10V (1)
- 100 mOhm @ 14A, 10V (1)
- 13 mOhm @ 10A, 10V (1)
- 21.5 mOhm @ 10A, 10V (1)
- 210 mOhm @ 5.6A, 10V (2)
- 24.5 mOhm @ 18A, 10V (1)
- 530 mOhm @ 4.25A, 10V (1)
- 660 mOhm @ 2.5A, 10V (1)
- 7.35 mOhm @ 14A, 10V (1)
- 750 mOhm @ 2A, 10V (1)
- 750 mOhm @ 3A, 10V (1)
- 800 mOhm @ 2A, 10V (1)
- 860 mOhm @ 2.4A, 10V (1)
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
14 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,874
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Infineon Technologies | MOSFET N-CH 600V 5.7A TO252-3 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 48W (Tc) | N-Channel | - | 600V | 5.7A (Tc) | 750 mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | 373pF @ 100V | 10V | ±20V | ||
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3,657
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Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 55V | 30A (Tc) | 24.5 mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | 10V | ±20V | |||
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3,074
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Infineon Technologies | MOSFET N-CH 600V TO-252-3 | CoolMOS™ CE | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 48W (Tc) | N-Channel | - | 600V | 5.6A (Tc) | 800 mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | 373pF @ 100V | 10V | ±20V | |||
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1,805
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STMicroelectronics | MOSFET N-CH 650V 8.5A PWRFLAT56 | MDmesh™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 48W (Tc) | N-Channel | - | 650V | 5A (Tc) | 750 mOhm @ 3A, 10V | 4V @ 250µA | 12.5nC @ 10V | 410pF @ 100V | 10V | ±25V | |||
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2,871
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STMicroelectronics | MOSFET N-CH 650V 4.5A POWERFLAT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | PowerFlat™ (5x6) | 48W (Tc) | N-Channel | - | 650V | 4.5A (Tc) | 1 Ohm @ 2.5A, 10V | 4V @ 250µA | 10.3nC @ 10V | 315pF @ 100V | 10V | ±25V | |||
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3,269
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STMicroelectronics | MOSFET N-CH 600V 5.5A PWRFLAT56 | MDmesh™ II Plus | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 48W (Tc) | N-Channel | - | 600V | 5.5A (Tc) | 660 mOhm @ 2.5A, 10V | 4V @ 250µA | 13.5nC @ 10V | 400pF @ 100V | 10V | ±25V | |||
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3,712
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STMicroelectronics | MOSFET N-CH 600V 4.8A PWRFLAT56 | MDmesh™ II Plus | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 48W (Tc) | N-Channel | - | 600V | 4.8A (Tc) | 860 mOhm @ 2.4A, 10V | 4V @ 250µA | 10nC @ 10V | 320pF @ 100V | 10V | ±25V | |||
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3,515
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Vishay Siliconix | MOSFET N-CH 80V 30A POWERPAKSO-8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 48W (Tc) | N-Channel | - | 80V | 30A (Tc) | 21.5 mOhm @ 10A, 10V | 3.5V @ 250µA | 25nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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1,853
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ON Semiconductor | MOSFET N-CH 50V 14A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 48W (Tc) | N-Channel | - | 50V | 14A (Tc) | 100 mOhm @ 14A, 10V | 4V @ 250µA | 40nC @ 20V | 570pF @ 25V | 10V | ±20V | |||
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3,229
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Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
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1,857
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Vishay Siliconix | MOSFET N-CH 60V 30A POWERPAKSO-8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 48W (Tc) | N-Channel | - | 60V | 30A (Tc) | 13 mOhm @ 10A, 10V | 3.5V @ 250µA | 35nC @ 10V | 1700pF @ 25V | 10V | ±20V | |||
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1,900
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|
Vishay Siliconix | MOSFET N-CH 40V 58A POWERPAKSOL | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8L | 48W (Tc) | N-Channel | - | 40V | 58A (Tc) | 7.35 mOhm @ 14A, 10V | 3.5V @ 250µA | 55nC @ 10V | 2450pF @ 20V | 10V | ±20V | |||
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3,250
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|
STMicroelectronics | MOSFET N-CH 650V 8.5A 8POWERFLAT | MDmesh™ V | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 48W (Tc) | N-Channel | - | 650V | 8.5A (Tc) | 530 mOhm @ 4.25A, 10V | 5V @ 250µA | 17nC @ 10V | 644pF @ 100V | 10V | ±25V | |||
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949
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|
Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V |
