- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,089
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 40V 28A 8VQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN | PQFN (5x6) Single Die | 3.6W (Ta), 156W (Tc) | N-Channel | - | 40V | 28A (Ta), 100A (Tc) | 2.6 mOhm @ 50A, 10V | 4V @ 150µA | 110nC @ 10V | 4490pF @ 20V | 10V | ±20V | ||
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1,924
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N-CH 75V 150A SOP8 | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 142W (Tc) | N-Channel | - | 75V | 150A (Tc) | 2.6 mOhm @ 50A, 10V | 4V @ 1mA | 72nC @ 10V | 6000pF @ 37.5V | 10V | ±20V |
