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- Operating Temperature :
- Package / Case :
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- Current - Continuous Drain (Id) @ 25°C :
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9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,710
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ON Semiconductor | MOSFET P-CH 8V 3.7A 6-WDFN | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 700mW (Ta) | P-Channel | - | 8V | 3.7A (Ta) | 36 mOhm @ 6.2A, 4.5V | 720mV @ 250µA | 25nC @ 4.5V | 1585pF @ 4V | 1.2V, 4.5V | ±6V | ||
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1,529
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|
ON Semiconductor | MOSFET P-CH 8V 3.7A 6-WDFN | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 700mW (Ta) | P-Channel | - | 8V | 3.7A (Ta) | 36 mOhm @ 6.2A, 4.5V | 720mV @ 250µA | 25nC @ 4.5V | 1585pF @ 4V | 1.2V, 4.5V | ±6V | ||
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3,993
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|
ON Semiconductor | MOSFET P-CH 8V 4.6A 6-TSOP | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 970mW (Ta) | P-Channel | - | 8V | 4.6A (Ta) | 31 mOhm @ 4.6A, 4.5V | 850mV @ 250µA | 21nC @ 4.5V | 2200pF @ 6V | 1.2V, 4.5V | ±6V | ||
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754
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | ||
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1,824
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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618
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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2,138
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANCE | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 12V | 5.4A (Ta) | 17 mOhm @ 5A, 4.5V | 1V @ 1mA | 33nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | ||
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3,761
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANCE | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 12V | 5.4A (Ta) | 17 mOhm @ 5A, 4.5V | 1V @ 1mA | 33nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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822
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANCE | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 12V | 5.4A (Ta) | 17 mOhm @ 5A, 4.5V | 1V @ 1mA | 33nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V |
