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- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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- Input Capacitance (Ciss) (Max) @ Vds :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,583
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Infineon Technologies | MOSFET N-CH 150V 41A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | ||
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2,594
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IXYS | MOSFET N-CH 500V 12A I2-PAK | Polar™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 (I2PAK) | 200W (Tc) | N-Channel | - | 500V | 12A (Tc) | 500 mOhm @ 6A, 10V | 5.5V @ 250µA | 29nC @ 10V | 1830pF @ 25V | 10V | ±30V | ||
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2,818
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IXYS | MOSFET N-CH 500V 12A D2-PAK | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 200W (Tc) | N-Channel | - | 500V | 12A (Tc) | 500 mOhm @ 6A, 10V | 5.5V @ 250µA | 29nC @ 10V | 1830pF @ 25V | 10V | ±30V | |||
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3,688
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IXYS | MOSFET N-CH 600V 10A TO-220 | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 600V | 10A (Tc) | 740 mOhm @ 5A, 10V | 5.5V @ 250µA | 32nC @ 10V | 1610pF @ 25V | 10V | ±30V | |||
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3,546
Ships today + free overnight shipping
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IXYS | MOSFET N-CH 500V 12A TO-220 | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 500V | 12A (Tc) | 500 mOhm @ 6A, 10V | 5.5V @ 250µA | 29nC @ 10V | 1830pF @ 25V | 10V | ±30V | |||
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1,334
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IXYS | MOSFET N-CH 600V 10A D2-PAK | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 200W (Tc) | N-Channel | - | 600V | 10A (Tc) | 740 mOhm @ 5A, 10V | 5.5V @ 250µA | 32nC @ 10V | 1610pF @ 25V | 10V | ±30V | |||
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3,423
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IXYS | MOSFET N-CH 850V 8A TO263HV | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263HV | 200W (Tc) | N-Channel | - | 850V | 8A (Tc) | 850 mOhm @ 4A, 10V | 5.5V @ 250µA | 17nC @ 10V | 654pF @ 25V | 10V | ±30V | |||
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1,223
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IXYS | MOSFET N-CH 850V 8A TO220AB | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB (IXFP) | 200W (Tc) | N-Channel | - | 850V | 8A (Tc) | 850 mOhm @ 4A, 10V | 5.5V @ 250µA | 17nC @ 10V | 654pF @ 25V | 10V | ±30V | |||
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1,292
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 150V 41A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V |
