Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
GET PRICE
RFQ
807
Ships today + free overnight shipping
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 12A TO262F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262F 28W (Tc) N-Channel 600V 12A (Tc) 520 mOhm @ 6A, 10V 5V @ 250µA 50nC @ 10V 1954pF @ 100V 10V ±30V
AOWF12N50
Per Unit
$0.69
RFQ
1,675
Ships today + free overnight shipping
Alpha & Omega Semiconductor Inc. MOSFET N-CH 500V 12A TO262F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak - 28W (Tc) N-Channel 500V 12A (Tc) 520 mOhm @ 6A, 10V 4.5V @ 250µA 37nC @ 10V 1633pF @ 25V 10V ±30V
AOWF12T60P
Per Unit
$1.48
RFQ
3,810
Ships today + free overnight shipping
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 12A TO262F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262F 28W (Tc) N-Channel 600V 12A (Tc) 520 mOhm @ 6A, 10V 5V @ 250µA 50nC @ 10V 2028pF @ 100V 10V ±30V
Page 1 / 1