- Manufacture :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,478
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Global Power Technologies Group | MOSFET N-CH 800V 12A TO3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 416W (Tc) | N-Channel | - | 800V | 12A (Tc) | 650 mOhm @ 6A, 10V | 5V @ 250µA | 79nC @ 10V | 3370pF @ 25V | 10V | ±30V | ||
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889
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Global Power Technologies Group | MOSFET N-CH 900V 11A TO3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 416W (Tc) | N-Channel | - | 900V | 11A (Tc) | 900 mOhm @ 5.5A, 10V | 5V @ 250µA | 84nC @ 10V | 3240pF @ 25V | 10V | ±30V | ||
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3,418
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IXYS | MOSFET N-CH 800V 28A ISOPLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 416W (Tc) | N-Channel | - | 800V | 28A (Tc) | 240 mOhm @ 19A, 10V | 4.5V @ 8mA | 190nC @ 10V | 8340pF @ 25V | 10V | ±30V |
