- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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2,543
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ON Semiconductor | MOSFET P-CH 60V 18A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | 82W (Tc) | P-Channel | 60V | 18A (Tc) | 140 mOhm @ 7A, 10V | 4V @ 250µA | 38nC @ 10V | 1155pF @ 25V | 10V | ±30V | |||
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3,212
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ON Semiconductor | MOSFET P-CH 60V 9.7A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | 49W (Tc) | P-Channel | 60V | 9.7A (Tc) | 280 mOhm @ 4.9A, 10V | 4V @ 250µA | 19nC @ 10V | 600pF @ 25V | 10V | ±30V |