- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,543
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Microsemi Corporation | MOSFET N-CH 1000V 65A J3 | - | Discontinued at Digi-Key | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | J3 Module | Module | 1250W (Tc) | N-Channel | - | 1000V | 65A (Tc) | 145 mOhm @ 32.5A, 10V | 4V @ 10mA | 2000nC @ 10V | 31600pF @ 25V | 10V | ±30V | ||
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3,725
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Microsemi Corporation | MOSFET N-CH 600V 65A TO-264MAX | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | 264 MAX™ [L2] | 833W (Tc) | N-Channel | - | 600V | 65A (Tc) | 80 mOhm @ 32.5A, 10V | 4V @ 5mA | 590nC @ 10V | 13300pF @ 25V | 10V | ±30V | ||
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1,370
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ON Semiconductor | MOSFET N-CH 200V 65A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 310W (Tc) | N-Channel | - | 200V | 65A (Tc) | 32 mOhm @ 32.5A, 10V | 5V @ 250µA | 200nC @ 10V | 7900pF @ 25V | 10V | ±30V | |||
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3,018
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ON Semiconductor | SUPERFET3 650V TO247 | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 446W (Tc) | N-Channel | - | 650V | 65A (Tc) | 40 mOhm @ 32.5A, 10V | 5V @ 6.5mA | 158nC @ 10V | 5940pF @ 400V | 10V | ±30V | |||
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3,830
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Infineon Technologies | MOSFET N-CH 200V 65A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 330W (Tc) | N-Channel | - | 200V | 65A (Tc) | 24 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | |||
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2,322
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IXYS | 850V/65A ULTRA JUNCTION X-CLASS | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 830W (Tc) | N-Channel | - | 850V | 65A (Tc) | 65 mOhm @ 33A, 10V | 5.5V @ 8mA | 230nC @ 10V | 8900pF @ 25V | 10V | ±30V | |||
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2,010
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ON Semiconductor | MOSFET N-CH 650V 65A TO247-3 | SuperFET® III | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 | 417W (Tc) | N-Channel | - | 650V | 65A (Tc) | 40 mOhm @ 32.5A, 10V | 4.5V @ 6.5mA | 136nC @ 10V | 4740pF @ 400V | 10V | ±30V | |||
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1,523
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 200V 65A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 330W (Tc) | N-Channel | - | 200V | 65A (Tc) | 25 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V |
