- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,262
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IXYS | MOSFET N-CH 1200V 20A SOT-227B | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 595W (Tc) | N-Channel | - | 1200V | 20A (Tc) | 570 mOhm @ 10A, 10V | 6.5V @ 1mA | 193nC @ 10V | 11100pF @ 25V | 10V | ±30V | |||
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3,537
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Microsemi Corporation | MOSFET N-CH 1200V 19A SOT227 | POWER MOS 7® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 520W (Tc) | N-Channel | - | 1200V | 19A (Tc) | 570 mOhm @ 10A, 10V | 5V @ 2.5mA | 290nC @ 10V | 6200pF @ 25V | 10V | ±30V | ||
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3,062
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Microsemi Corporation | MOSFET N-CH 1200V 17A SOT227 | POWER MOS 7® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 460W (Tc) | N-Channel | - | 1200V | 17A (Tc) | 570 mOhm @ 10A, 10V | 5V @ 2.5mA | 290nC @ 10V | 6200pF @ 25V | 10V | ±30V | ||
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3,053
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IXYS | MOSFET N-CH 1000V 20A TO-268 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 660W (Tc) | N-Channel | - | 1000V | 20A (Tc) | 570 mOhm @ 10A, 10V | 6.5V @ 1mA | 126nC @ 10V | 7300pF @ 25V | 10V | ±30V | |||
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1,582
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IXYS | MOSFET N-CH 1000V 20A TO-247 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 660W (Tc) | N-Channel | - | 1000V | 20A (Tc) | 570 mOhm @ 10A, 10V | 6.5V @ 1mA | 126nC @ 10V | 7300pF @ 25V | 10V | ±30V | |||
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2,692
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IXYS | MOSFET N-CH 1200V 20A TO-264 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 780W (Tc) | N-Channel | - | 1200V | 20A (Tc) | 570 mOhm @ 10A, 10V | 6.5V @ 1mA | 193nC @ 10V | 11100pF @ 25V | 10V | ±30V | |||
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2,178
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IXYS | MOSFET N-CH 1200V 20A PLUS247 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 780W (Tc) | N-Channel | - | 1200V | 20A (Tc) | 570 mOhm @ 10A, 10V | 6.5V @ 1mA | 193nC @ 10V | 11100pF @ 25V | 10V | ±30V |
