- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
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11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,848
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Global Power Technologies Group | MOSFET N-CH 500V 4A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 92.5W (Tc) | N-Channel | - | 500V | 4A (Tc) | 1.85 Ohm @ 2A, 10V | 3.5V @ 250µA | 11nC @ 10V | 602pF @ 25V | 10V | ±30V | ||
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2,664
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Global Power Technologies Group | MOSFET N-CH 500V 4A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32W (Tc) | N-Channel | - | 500V | 4A (Tc) | 1.85 Ohm @ 2A, 10V | 3.5V @ 250µA | 11nC @ 10V | 602pF @ 25V | 10V | ±30V | ||
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3,644
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Global Power Technologies Group | MOSFET N-CH 500V 10A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 158W (Tc) | N-Channel | - | 500V | 10A (Tc) | 700 mOhm @ 5A, 10V | 3.5V @ 250µA | 28nC @ 10V | 1546pF @ 25V | 10V | ±30V | ||
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3,090
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Global Power Technologies Group | MOSFET N-CH 500V 10A TO220F | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 51.4W (Tc) | N-Channel | - | 500V | 10A (Tc) | 700 mOhm @ 5A, 10V | 3.5V @ 250µA | 28nC @ 10V | 1546pF @ 25V | 10V | ±30V | ||
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2,542
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IXYS | MOSFET N-CH 1000V 10A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 400W (Tc) | N-Channel | Depletion Mode | 1000V | 10A (Tc) | 1.4 Ohm @ 10A, 10V | 3.5V @ 250µA | 130nC @ 10V | 2500pF @ 25V | 10V | ±30V | |||
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1,544
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Vishay Siliconix | MOSFET N-CH 250V 7A TO252AA | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 71W (Tc) | N-Channel | - | 250V | 7A (Tc) | 350 mOhm @ 10A, 10V | 3.5V @ 250µA | 29nC @ 10V | 1205pF @ 25V | 10V | ±30V | |||
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943
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IXYS | MOSFET N-CH 1000V 10A TO-268 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 400W (Tc) | N-Channel | Depletion Mode | 1000V | 10A (Tc) | 1.4 Ohm @ 10A, 10V | 3.5V @ 250µA | 130nC @ 10V | 2500pF @ 25V | 10V | ±30V | |||
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3,857
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 780 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
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2,960
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 800 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||
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2,864
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 800 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
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2,727
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 800 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V |
