Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP2M020A050F
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RFQ
1,950
Ships today + free overnight shipping
Global Power Technologies Group MOSFET N-CH 500V 18A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 48W (Tc) N-Channel 500V 18A (Tc) 300 mOhm @ 9A, 10V 5V @ 250µA 44nC @ 10V 2880pF @ 25V 10V ±30V
FCPF125N65S3
Per Unit
$1.91
RFQ
748
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 650V 24A TO220F SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) N-Channel 650V 24A (Tc) 125 mOhm @ 12A, 10V 4.5V @ 2.4mA 44nC @ 10V 1790pF @ 400V 10V ±30V
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