- Part Status :
- Package / Case :
- Supplier Device Package :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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717
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Microsemi Corporation | MOSFET N-CH 200V 100A TO-264 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | |||
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GET PRICE |
1,500
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Microsemi Corporation | MOSFET N-CH 200V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | ||
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GET PRICE |
1,062
Ships today + free overnight shipping
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Microsemi Corporation | MOSFET N-CH 200V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | ||
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3,208
Ships today + free overnight shipping
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Microsemi Corporation | MOSFET N-CH 200V 100A TO-264 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V |
