Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AOTF11N62
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RFQ
1,582
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 620V 11A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 50W (Tc) N-Channel 620V 11A (Tc) 650 mOhm @ 5.5A, 10V 4.5V @ 250µA 37nC @ 10V 1990pF @ 25V 10V ±30V
AOTF11N62L
Per Unit
$0.57
RFQ
3,274
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 620V 11A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 39W (Tc) N-Channel 620V 11A (Tc) 650 mOhm @ 5.5A, 10V 4.5V @ 250µA 37nC @ 10V 1990pF @ 25V 10V ±30V
AOTF11N60L
Per Unit
$1.32
RFQ
1,017
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 37.9W (Tc) N-Channel 600V 11A (Tc) 650 mOhm @ 5.5A, 10V 4.5V @ 250µA 37nC @ 10V 1990pF @ 25V 10V ±30V
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