Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT12057B2LLG
Per Unit
$31.83
RFQ
2,293
Ships today + free overnight shipping
Microsemi Corporation MOSFET N-CH 1200V 22A T-MAX POWER MOS 7® Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 T-MAX™ [B2] 690W (Tc) N-Channel - 1200V 22A (Tc) 570 mOhm @ 11A, 10V 5V @ 2.5mA 290nC @ 10V 6200pF @ 25V 10V ±30V
APT12057JLL
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RFQ
3,537
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Microsemi Corporation MOSFET N-CH 1200V 19A SOT227 POWER MOS 7® Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 520W (Tc) N-Channel - 1200V 19A (Tc) 570 mOhm @ 10A, 10V 5V @ 2.5mA 290nC @ 10V 6200pF @ 25V 10V ±30V
APT12067JLL
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RFQ
3,062
Ships today + free overnight shipping
Microsemi Corporation MOSFET N-CH 1200V 17A SOT227 POWER MOS 7® Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 460W (Tc) N-Channel - 1200V 17A (Tc) 570 mOhm @ 10A, 10V 5V @ 2.5mA 290nC @ 10V 6200pF @ 25V 10V ±30V
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