Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT8024B2LLG
Per Unit
$26.52
RFQ
2,527
Ships today + free overnight shipping
Microsemi Corporation MOSFET N-CH 800V 31A T-MAX POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 565W (Tc) N-Channel - 800V 31A (Tc) 240 mOhm @ 15.5A, 10V 5V @ 2.5mA 160nC @ 10V 4670pF @ 25V 10V ±30V
FDA59N30
Per Unit
$3.66
RFQ
3,301
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 300V 59A TO-3P UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 500W (Tc) N-Channel - 300V 59A (Tc) 56 mOhm @ 29.5A, 10V 5V @ 250µA 100nC @ 10V 4670pF @ 25V 10V ±30V
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