Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFR64N60Q3
Per Unit
$29.31
RFQ
3,481
Ships today + free overnight shipping
IXYS MOSFET N-CH 600V 42A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISOPLUS247™ 568W (Tc) N-Channel - 600V 42A (Tc) 104 mOhm @ 32A, 10V 6.5V @ 4mA 190nC @ 10V 9930pF @ 25V 10V ±30V
IXFX64N60Q3
Per Unit
$26.57
RFQ
2,685
Ships today + free overnight shipping
IXYS MOSFET N-CH 600V 64A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel - 600V 64A (Tc) 95 mOhm @ 32A, 10V 6.5V @ 4mA 190nC @ 10V 9930pF @ 25V 10V ±30V
IXFK64N60Q3
Per Unit
$26.65
RFQ
3,518
Ships today + free overnight shipping
IXYS MOSFET N-CH 600V 64A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1250W (Tc) N-Channel - 600V 64A (Tc) 95 mOhm @ 32A, 10V 6.5V @ 4mA 190nC @ 10V 9930pF @ 25V 10V ±30V
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