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- Package / Case :
- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
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4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,739
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IXYS | MOSFET N-CH 200V 130A TO-247 | TrenchHV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 830W (Tc) | N-Channel | - | 200V | 130A (Tc) | 16 mOhm @ 500mA, 10V | 5V @ 1mA | 150nC @ 10V | 8800pF @ 25V | 10V | ±20V | ||||
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3,124
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Toshiba Semiconductor and Storage | MOSFET N-CH 200V 1.8A 8-SOP | π-MOSV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 200V | 1.8A (Ta) | 400 mOhm @ 900mA, 10V | 5V @ 1mA | 11nC @ 10V | 440pF @ 10V | 4.5V, 10V | ±20V | |||
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1,420
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IXYS | MOSFET N-CH 200V 170A TO-264 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 1250W (Tc) | N-Channel | - | 200V | 170A (Tc) | 14 mOhm @ 500mA, 10V | 5V @ 1mA | 185nC @ 10V | 11400pF @ 25V | 10V | ±20V | ||||
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941
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IXYS | MOSFET N-CH 200V 170A PLUS247 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 1250W (Tc) | N-Channel | - | 200V | 170A (Tc) | 14 mOhm @ 500mA, 10V | 5V @ 1mA | 185nC @ 10V | 11400pF @ 25V | 10V | ±20V |