- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,712
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ON Semiconductor | MOSFET N-CH 100V 44A POWER56 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 125W (Tc) | N-Channel | - | 100V | 44A (Ta), 124A (Tc) | 4.2 mOhm @ 44A, 10V | 4V @ 250µA | 59nC @ 10V | 4125pF @ 50V | 6V, 10V | ±20V | |||
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2,344
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Infineon Technologies | MOSFET N-CH 100V 10A 8-PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 100V | 10A (Ta), 55A (Tc) | 14.9 mOhm @ 33A, 10V | 4V @ 100µA | 59nC @ 10V | 2570pF @ 25V | 10V | ±20V | |||
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3,420
Ships today + free overnight shipping
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Rohm Semiconductor | MOSFET N-CH 30V 20A 8HSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 25W (Tc) | N-Channel | - | 30V | 20A (Ta) | 3.9 mOhm @ 20A, 10V | 2.5V @ 1mA | 59nC @ 10V | 3100pF @ 15V | 4.5V, 10V | ±20V | |||
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2,599
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 116A 8DSOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 80V | 116A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 10V | ±20V | |||
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3,524
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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3,000
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Nexperia USA Inc. | MOSFET N-CH 100V 68A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 100V | 68A (Tc) | 13.9 mOhm @ 15A, 10V | 4V @ 1mA | 59nC @ 10V | 3195pF @ 50V | 10V | ±20V | |||
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2,439
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Infineon Technologies | MOSFET N-CH 25V 38A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 96W (Tc) | N-Channel | - | 25V | 38A (Ta), 100A (Tc) | 1.05 mOhm @ 30A, 10V | 2V @ 250µA | 59nC @ 10V | 4200pF @ 12V | 4.5V, 10V | ±20V | |||
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2,460
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Infineon Technologies | MOSFET N-CH 30V 27A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 59W (Tc) | N-Channel | - | 30V | 27A (Ta), 50A (Tc) | 2.95 mOhm @ 20A, 10V | 2.2V @ 50µA | 59nC @ 10V | 3610pF @ 10V | 4.5V, 10V | ±20V | |||
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1,381
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ON Semiconductor | MOSFET N-CH 40V 70A DPAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 79W (Tc) | N-Channel | - | 40V | 70A (Tc) | 8.7 mOhm @ 50A, 10V | 4V @ 250µA | 59nC @ 10V | 4050pF @ 25V | 10V | ±20V | |||
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812
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Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
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3,573
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 40V 70A DPAK | Automotive, AEC-Q101, PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 79W (Tc) | N-Channel | - | 40V | 70A (Tc) | 8.7 mOhm @ 50A, 10V | 4V @ 250µA | 59nC @ 10V | 4050pF @ 25V | 10V | ±20V | |||
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2,028
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N CH 80V 60A SOP ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 78W (Tc) | N-Channel | - | 80V | 60A (Tc) | 4 mOhm @ 30A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 10V | ±20V |
