- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,291
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 55A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 80V | 55A (Tc) | 12.2 mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | 1700pF @ 40V | 10V | ±20V | |||
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2,633
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 52A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 100V | 52A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | |||
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2,207
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 650V 18A TO220-3 | CoolMOS™ P7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 72W (Tc) | N-Channel | - | 650V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | |||
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2,562
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 650V 20.2A TO247 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 72W (Tc) | N-Channel | - | 650V | 13A (Tc) | 190 mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | 10V | ±20V | |||
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941
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STMicroelectronics | MOSFET N-CH 250V IPAK | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 72W (Tc) | N-Channel | - | 250V | 8A (Tc) | 420 mOhm @ 4A, 10V | 4V @ 250µA | 16nC @ 10V | 500pF @ 25V | 10V | ±20V | |||
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817
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ON Semiconductor | MOSFET N-CH 200V 9.5A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 72W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 360 mOhm @ 4.75A, 10V | 4V @ 250µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | |||
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1,713
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 650V 13A TO220 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 72W (Tc) | N-Channel | - | 650V | 13A (Tc) | 190 mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | 10V | ±20V | |||
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1,635
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 650V 18A TO247-3 | CoolMOS™ P7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 72W (Tc) | N-Channel | - | 650V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V |
