Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQP7P06
Per Unit
$0.81
RFQ
1,010
Ships today + free overnight shipping
ON Semiconductor MOSFET P-CH 60V 7A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 45W (Tc) P-Channel 60V 7A (Tc) 410 mOhm @ 3.5A, 10V 4V @ 250µA 8.2nC @ 10V 295pF @ 25V 10V ±25V
AOY2N60
Per Unit
$0.23
RFQ
2,366
Ships today + free overnight shipping
Alpha & Omega Semiconductor Inc. MOSFET N-CH - Active Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 57W (Tc) N-Channel 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4.5V @ 250µA 11nC @ 10V 295pF @ 25V 10V ±30V
AOI2N60A
Per Unit
$0.23
RFQ
881
Ships today + free overnight shipping
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 2A - Active Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 57W (Tc) N-Channel 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4.5V @ 250µA 11nC @ 10V 295pF @ 25V 10V ±30V
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