Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRL5602
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RFQ
2,404
Ships today + free overnight shipping
Infineon Technologies MOSFET P-CH 20V 24A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220AB - P-Channel 20V 24A (Tc) 42 mOhm @ 12A, 4.5V 1V @ 250µA 44nC @ 4.5V 1460pF @ 15V 2.5V, 4.5V ±8V
IXTP24P085T
Per Unit
$1.92
RFQ
748
Ships today + free overnight shipping
IXYS MOSFET P-CH 85V 24A TO-220 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 83W (Tc) P-Channel 85V 24A (Tc) 65 mOhm @ 12A, 10V 4.5V @ 250µA 41nC @ 10V 2090pF @ 25V 10V ±15V
NDP6020P
Per Unit
$1.88
RFQ
2,489
Ships today + free overnight shipping
ON Semiconductor MOSFET P-CH 20V 24A TO-220 - Active Tube MOSFET (Metal Oxide) -65°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 60W (Tc) P-Channel 20V 24A (Tc) 50 mOhm @ 12A, 4.5V 1V @ 250µA 35nC @ 5V 1590pF @ 10V 4.5V ±8V
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