Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIS782DN-T1-GE3
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RFQ
799
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Vishay Siliconix MOSFET N-CH 30V 16A POWERPAK1212 - Active Digi-Reel® MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 41W (Tc) N-Channel Schottky Diode (Body) 30V 16A (Tc) 9.5 mOhm @ 10A, 10V 2.3V @ 250µA 30.5nC @ 10V 1025pF @ 15V 4.5V, 10V ±20V
SIS780DN-T1-GE3
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RFQ
2,002
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Vishay Siliconix MOSFET N-CH 30V 18A POWERPAK1212 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 27.7W (Tc) N-Channel Schottky Diode (Body) 30V 18A (Tc) 13.5 mOhm @ 15A, 10V 2.3V @ 250µA 24.5nC @ 10V 722pF @ 15V 4.5V, 10V ±20V
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