Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI7812DN-T1-E3
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2,527
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Vishay Siliconix MOSFET N-CH 75V 16A 1212-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.8W (Ta), 52W (Tc) N-Channel - 75V 16A (Tc) 37 mOhm @ 7.2A, 10V 3V @ 250µA 24nC @ 10V 840pF @ 35V 4.5V, 10V ±20V
SI7812DN-T1-GE3
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3,782
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Vishay Siliconix MOSFET N-CH 75V 16A 1212-8 PPAK TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.8W (Ta), 52W (Tc) N-Channel - 75V 16A (Tc) 37 mOhm @ 7.2A, 10V 3V @ 250µA 24nC @ 10V 840pF @ 35V 4.5V, 10V ±20V
SQ7414AEN-T1_GE3
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1,135
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Vishay Siliconix MOSFET N-CH 60V 5.6A PPAK 1212-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PowerPAK® 1212-8 62W (Tc) N-Channel - 60V 16A (Tc) 26 mOhm @ 5.7A, 10V 2.5V @ 250µA 24nC @ 10V 980pF @ 30V 4.5V, 10V ±20V
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