- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,130
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Vishay Siliconix | MOSFET N-CH 30V 20A 1212-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.5W (Ta), 28W (Tc) | N-Channel | 30V | 20A (Tc) | 8.9 mOhm @ 15A, 10V | 2.5V @ 250µA | 30nC @ 10V | 997pF @ 15V | 4.5V, 10V | ±20V | ||
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953
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Vishay Siliconix | MOSFET N-CHAN 100V POWERPAK 1212 | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.7W (Ta), 52W (Tc) | N-Channel | 100V | 9.4A (Ta), 35.3A (Tc) | 17.4 mOhm @ 10A, 10V | 4V @ 250µA | 30nC @ 10V | 1470pF @ 50V | 7.5V, 10V | ±20V | ||
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1,558
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Vishay Siliconix | MOSFET N-CH 150V 2.2A 1212-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 1.5W (Ta) | N-Channel | 150V | 2.2A (Ta) | 135 mOhm @ 3.4A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | ||
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1,303
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Vishay Siliconix | MOSFET N-CH 150V 2.2A 1212-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 1.5W (Ta) | N-Channel | 150V | 2.2A (Ta) | 135 mOhm @ 3.4A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V |