Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIS406DN-T1-GE3
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RFQ
2,710
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Vishay Siliconix MOSFET N-CH 30V 9A 1212-8 PPAK TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 1.5W (Ta) N-Channel - 30V 9A (Ta) 11 mOhm @ 12A, 10V 3V @ 250µA 28nC @ 10V 1100pF @ 15V 4.5V, 10V ±25V
SISA34DN-T1-GE3
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RFQ
2,030
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Vishay Siliconix MOSFET N-CH 30V 40A POWERPAK1212 TrenchFET® Gen IV Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 20.8W (Tc) N-Channel - 30V 40A (Tc) 6.7 mOhm @ 10A, 10V 2.4V @ 250µA 12nC @ 4.5V 1100pF @ 15V 4.5V, 10V +20V, -16V
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