Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPC6109-H(TE85L,FM
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RFQ
685
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET P-CH 30V 5A VS-6 U-MOSIII-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) P-Channel - 30V 5A (Ta) 59 mOhm @ 2.5A, 10V 1.2V @ 200µA 12.3nC @ 10V 490pF @ 10V 4.5V, 10V ±20V
TPCP8103-H(TE85LFM
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RFQ
2,012
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET P-CH 40V 4.8A PS-8 U-MOSIII-H Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) P-Channel - 40V 4.8A (Ta) 40 mOhm @ 2.4A, 10V 2V @ 1mA 19nC @ 10V 800pF @ 10V 4.5V, 10V ±20V
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