- Series :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,015
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Texas Instruments | MOSFET N-CH 12V 76A 6SON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-WSON (2x2) | 2.7W (Ta) | N-Channel | - | 12V | 22A (Ta) | 9.3 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 6.6nC @ 4.5V | 997pF @ 6V | 2.5V, 4.5V | ±8V | ||
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3,208
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|
Rohm Semiconductor | NCH 60V 22A POWER MOSFET | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 20W (Tc) | N-Channel | - | 60V | 22A (Ta) | 26 mOhm @ 22A, 10V | 3V @ 1mA | 30nC @ 10V | 1500pF @ 10V | 4V, 10V | ±20V | ||
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3,843
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 22A 8-SOP ADV | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | - | 60V | 22A (Ta) | 7.5 mOhm @ 11A, 10V | 4V @ 300µA | 31nC @ 10V | 2320pF @ 30V | 10V | ±20V | ||
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2,213
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Texas Instruments | MOSFET N-CH 30V 22A 6SON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-SON (2x2) | 2.5W (Ta) | N-Channel | - | 30V | 22A (Ta) | 29 mOhm @ 5A, 4.5V | 2V @ 250µA | 3.1nC @ 4.5V | 468pF @ 15V | 4.5V, 10V | ±20V | ||
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2,796
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|
Texas Instruments | MOSFET N-CH 20V 22A 6-SON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-SON (2x2) | 2.5W (Ta) | N-Channel | - | 20V | 22A (Ta) | 15 mOhm @ 5A, 10V | 1.9V @ 250µA | 6.7nC @ 10V | 419pF @ 10V | 4.5V, 10V | ±20V | ||
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3,989
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EPC | TRANS GAN 200V 22A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (7-Solder Bar) | - | N-Channel | - | 200V | 22A (Ta) | 25 mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3nC @ 5V | 540pF @ 100V | 5V | +6V, -4V |
