Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CSD25483F4T
GET PRICE
RFQ
869
Ships today + free overnight shipping
Texas Instruments MOSFET P-CH 20V LGA FemtoFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-PICOSTAR 500mW (Ta) P-Channel - 20V 1.6A (Ta) 205 mOhm @ 500mA, 8V 1.2V @ 250µA 0.96nC @ 4.5V 198pF @ 10V 1.8V, 4.5V -12V
CSD25483F4
GET PRICE
RFQ
2,912
Ships today + free overnight shipping
Texas Instruments MOSFET P-CH 20V LGA NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-PICOSTAR 500mW (Ta) P-Channel - 20V 1.6A (Ta) 205 mOhm @ 500mA, 8V 1.2V @ 250µA 0.959nC @ 4.5V 198pF @ 10V 1.8V, 4.5V -12V
CSD13201W10
GET PRICE
RFQ
2,650
Ships today + free overnight shipping
Texas Instruments MOSFET N-CH 12V 1.6A 4DSBGA NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, DSBGA 4-DSBGA (1x1) 1.2W (Ta) N-Channel - 12V 1.6A (Ta) 34 mOhm @ 1A, 4.5V 1.1V @ 250µA 2.9nC @ 4.5V 462pF @ 6V 1.8V, 4.5V ±8V
Page 1 / 1