Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM9409CS RLG
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RFQ
3,445
Ships today + free overnight shipping
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 60V 3.5A 8SOP - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 3W (Ta) P-Channel - 60V 3.5A (Ta) 155 mOhm @ 3.5A, 10V 1V @ 250µA 6nC @ 10V 540pF @ 30V 4.5V, 10V ±20V
FDFS6N754
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RFQ
2,990
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ON Semiconductor MOSFET N-CH 30V 4A 8-SOIC PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.6W (Ta) N-Channel Schottky Diode (Isolated) 30V 4A (Ta) 56 mOhm @ 4A, 10V 2.5V @ 250µA 6nC @ 10V 299pF @ 15V 4.5V, 10V ±20V
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