Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPH3R203NL,L1Q
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RFQ
2,815
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 47A 8-SOP U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 44W (Tc) N-Channel - 30V 47A (Tc) 3.2 mOhm @ 23.5A, 10V 2.3V @ 300µA 21nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
TPN2R703NL,L1Q
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1,940
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.7 mOhm @ 22.5A, 10V 2.3V @ 300µA 21nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
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