Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI1469DH-T1-GE3
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RFQ
3,342
Ships today + free overnight shipping
Vishay Siliconix MOSFET P-CH 20V 2.7A SC-70-6 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 1.5W (Ta), 2.78W (Tc) P-Channel - 20V 2.7A (Tc) 80 mOhm @ 2A, 10V 1.5V @ 250µA 8.5nC @ 4.5V 470pF @ 10V 2.5V, 10V ±12V
TK7S10N1Z,LQ
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RFQ
791
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 7A DPAK U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 50W (Tc) N-Channel - 100V 7A (Ta) 48 mOhm @ 3.5A, 10V 4V @ 100µA 7.1nC @ 10V 470pF @ 10V 10V ±20V
SI1469DH-T1-E3
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RFQ
2,975
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Vishay Siliconix MOSFET P-CH 20V 2.7A SC70-6 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 1.5W (Ta), 2.78W (Tc) P-Channel - 20V 2.7A (Tc) 80 mOhm @ 2A, 10V 1.5V @ 250µA 8.5nC @ 4.5V 470pF @ 10V 2.5V, 10V ±12V
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