Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIE874DF-T1-GE3
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RFQ
2,566
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Vishay Siliconix MOSFET N-CH 20V 60A POLARPAK TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 20V 60A (Tc) 1.17 mOhm @ 20A, 10V 2.2V @ 250µA 145nC @ 10V 6200pF @ 10V 4.5V, 10V ±20V
SIE818DF-T1-E3
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RFQ
3,702
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Vishay Siliconix MOSFET N-CH 75V 60A 10-POLARPAK TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 75V 60A (Tc) 9.5 mOhm @ 16A, 10V 3V @ 250µA 95nC @ 10V 3200pF @ 38V 4.5V, 10V ±20V
SIE868DF-T1-GE3
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RFQ
2,998
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Vishay Siliconix MOSFET N-CH 40V 60A POLARPAK TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 40V 60A (Tc) 2.3 mOhm @ 20A, 10V 2.2V @ 250µA 145nC @ 10V 6100pF @ 20V 4.5V, 10V ±20V
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