Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI4431CDY-T1-E3
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RFQ
2,833
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Vishay Siliconix MOSFET P-CH 30V 9A 8SOIC TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 4.2W (Tc) P-Channel - 30V 9A (Tc) 32 mOhm @ 7A, 10V 2.5V @ 250µA 38nC @ 10V 1006pF @ 15V 4.5V, 10V ±20V
SI4431CDY-T1-GE3
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RFQ
3,319
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Vishay Siliconix MOSFET P-CH 30V 9A 8-SOIC TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 4.2W (Tc) P-Channel - 30V 9A (Tc) 32 mOhm @ 7A, 10V 2.5V @ 250µA 38nC @ 10V 1006pF @ 15V 4.5V, 10V ±20V
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