Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI7463DP-T1-GE3
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RFQ
3,226
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Vishay Siliconix MOSFET P-CH 40V 11A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) P-Channel - 40V 11A (Ta) 9.2 mOhm @ 18.6A, 10V 3V @ 250µA 140nC @ 10V - 4.5V, 10V ±20V
SI7463DP-T1-E3
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2,047
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Vishay Siliconix MOSFET P-CH 40V 11A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) P-Channel - 40V 11A (Ta) 9.2 mOhm @ 18.6A, 10V 3V @ 250µA 140nC @ 10V - 4.5V, 10V ±20V
SISS27DN-T1-GE3
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RFQ
989
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Vishay Siliconix MOSFET P-CH 30V 50A PPAK 1212-8S TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerPAK® 1212-8S (3.3x3.3) 4.8W (Ta), 57W (Tc) P-Channel - 30V 50A (Tc) 5.6 mOhm @ 15A, 10V 2.2V @ 250µA 140nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V
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